Publications highlights

Nature Communications volume 14, 4969 (2023)

In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear,...

Advanced Materials volume 35, 2211653 (2023)

Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause...

Advanced Materials, 2211993 (2023)

Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose...

Nature Nanotechnology volume 17, 1078 (2022)

Perpendicular electric fields can tune the electronic band structure of atomically thin semiconductors. In bilayer graphene, which is an intrinsic zero-gap semiconductor, a perpendicular electric field opens...

Nature Communications volume 13, 3917 (2022)

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the...

Advanced Materials (2022)

We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy...

Nature Communications volume 12, 6659 (2021)

Recent experiments on van der Waals antiferromagnets have shown that measuring the temperature (T) and magnetic field (H) dependence of the conductance allows their magnetic phase diagram to be mapped....

2D Materials 2020, vol. 7, no. 041002

Optical selection rules in monolayers of transition metal dichalcogenides and of their heterostructures are determined by the conservation of the z-component of the total angular momentum—J_Z =...

Physical Review Research. 2020, vol. 2, no. 2, 023051

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall...

2D Materials. 2020, vol. 7, no. 025042

Monolayer jacutingaite (Pt₂HgSe₃) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far...

Nature Materials volume 19, pages 299–304 (2020)

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range....

Nano Lett. 2020, 20, 2, 1322–1328

The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize...

2D Materials. 2020, vol. 7, no. 1, 015007

Chromium triiodide, CrI₃, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics...