Publications

Domaretskiy D, Ubrig N, Gutierrez Lezama I, Tran M, Morpurgo A.

2D Materials. 2021;8(045016)

Gutierrez Lezama I, Ubrig N, Ponomarev E, Morpurgo A.

Nature Reviews Physics. 2021;

Reliable and precise measurements of the relative energy of band edges in 2D semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. However, commonly employed techniques such as optical studies and scanning…

Wang Z, Gutierrez Lezama I, Dumcenco D, Ubrig N, Taniguchi T, Watanabe K, Giannini E, Gibertini M, Morpurgo A.

Nature communications. 2021;12(1):6659

Recent experiments on van der Waals antiferromagnets have shown that measuring the temperature ( T ) and magnetic field ( H ) dependence of the conductance allows their magnetic phase diagram to be mapped. Similarly, experiments on ferromagnetic CrBr ₃ barriers enabled the Curie…

Berthod C, Zhang H, Morpurgo A, Giamarchi T.

Physical Review Research. 2021;3(4):043036

Impressive progress in the control of atomically thin crystals is now enabling the realization of gated structures in which two electrodes are separated by atomic scale distances. The electrical capacitance of these structures is determined by phenomena that are not relevant in capacitors with…

Ubrig N, Ponomarev E, Zultak J, Domaretskiy D, Zólyomi V, Terry D, Howarth J, Gutierrez Lezama I, Zhukov A, Kudrynskyi ZR, Kovalyuk ZD, Patané A, Taniguchi T, Watanabe K, Gorbachev RV, Fal'ko VI, Morpurgo A.

Nature Materials. 2020;

Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral…

Delhomme A, Vaclavkova D, Slobodeniuk A, Orlita M, Potemski M, Basko DM, Watanabe K, Taniguchi T, Mauro D, Barreteau C, Giannini E, Morpurgo A, Ubrig N, Faugeras C.

2D Materials. 2020;7(041002)

Optical selection rules in monolayers of transition metal dichalcogenides and of their heterostructures are determined by the conservation of the z-component of the total angular momentum—J Z = L Z +S Z – associated with the C3 rotational lattice symmetry which assumes half integer values…

Tenasini G, Martino E, Ubrig N, Ghimire NJ, Berger H, Zaharko O, Wu F, Mitchell JF, Martin I, Forró L, Morpurgo A.

Physical Review Research. 2020;2(2):023051

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can, in principle, be observed. Here we present experiments on microfabricated devices…

Ubrig N, Wang Z, Teyssier J, Taniguchi T, Watanabe K, Giannini E, Morpurgo A, Gibertini M.

2D Materials. 2020;7(1):015007

Chromium triiodide, CrI3, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a …

Mauro D, Henck H, Gibertini M, Filippone M, Giannini E, Gutierrez Lezama I, Morpurgo A.

2D Materials. 2020;7(025042)

Monolayer jacutingaite (Pt2HgSe3) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow…

Long G, Henck H, Gibertini M, Dumcenco D, Wang Z, Taniguchi T, Watanabe K, Giannini E, Morpurgo A.

Nano letters . 2020;20(4):2452-2459

Reddy BA, Ponomarev E, Gutierrez Lezama I, Ubrig N, Barreteau C, Giannini E, Morpurgo A.

Nano Letters. 2020;20(2):1322-1328

The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided…

Soler Delgado D.

Graphene is a layer of carbon atoms arranged in a honeycomb lattice. In 2004, Andre Geim and Konstantin Novoselov made a revolutionary breakthrough as they were able to isolate graphene giving rise to a cascade of experiments that revealed its unique electronic properties. Electron interaction in…

Philippi M.

In 2004, A. Geim and K. Novoselov realized the first isolation of a one-atom-thick material, graphene. The discovery of graphene, which was immediately followed by that of many other 2D materials with a large variety of physical properties, has paved the way to study physical properties in…

Zhang H, Berthod C, Berger H, Giamarchi T, Morpurgo A.

Nano Letters. 2019;

Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in these systems are not understood. We…

Wang Z, Gibertini M, Dumcenco D, Taniguchi T, Watanabe K, Giannini E, Morpurgo A.

Nature nanotechnology . 2019;14(12):1116-1122

Sohier T, Ponomarev E, Gibertini M, Berger H, Marzari N, Ubrig N, Morpurgo A.

Physical Review X. 2019;9(3):031019

We report a combined experimental and theoretical investigation that reveals a new mechanism responsible for the enhancement of electron-phonon coupling in doped semiconductors in which multiple inequivalent valleys are simultaneously populated. Using Raman spectroscopy on ionic-liquid-gated…

Gibertini M, Koperski M, Morpurgo A, Novoselov KS.

Nature nanotechnology . 2019;14(5):408-419

Thiel L, Wang Z, Tschudin MA, Rohner D, Gutierrez Lezama I, Ubrig N, Gibertini M, Giannini E, Morpurgo A, Maletinsky P.

Science. 2019;364(6444):973-976

The discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has generated widespread interest. Making further progress in this area requires quantitative knowledge of the magnetic properties of vdW magnets at the nanoscale. We used scanning single-spin magnetometry based on …

Ponomarev E.

The isolation of single-atom-thick layer of graphite, very well known now as graphene, done by A.Geim and K.Novoselov (Nobel prize in physics 2010) in 2004 was a truly revolutionary breakthrough which opened up a new field of research and had a pronounced impact on multiple domains ranging from…

Nam YW, Ki D, Soler Delgado D, Morpurgo A.

Science. 2018;362(6412):324-328.

Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state whose origin remains to be understood. We show that a finite-temperature second-order phase transition occurs in multilayers whose critical temperature (Tc) increases from 12…

Ponomarev E, Pasztor A, Waelchli A, Scarfato A, Ubrig N, Renner C, Morpurgo A.

ACS Nano. 2018;

Philippi M, Gutierrez Lezama I, Ubrig N, Morpurgo A.

Applied Physics Letters. 2018;113(3):033502

We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe2 crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages (VG  0. For VG 

Cucchi I, Gutierrez Lezama I, Cappelli E, Mckeown Walker S, Bruno FY, Tenasini G, Wang L, Ubrig N, Barreteau C, Giannini E, Gibertini M, Tamai A, Morpurgo A, Baumberger F.

Nano Letters. 2018;

Two-dimensional crystals of semi-metallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few-layer 1T′-WTe2 and of a quantum spin Hall state in monolayers of the same material. Understanding these…

Martinez Castro J, Mauro D, Pasztor A, Gutierrez Lezama I, Scarfato A, Morpurgo A, Renner C.

Nano Letters. 2018;18(11):6696-6702

Many atomically thin exfoliated two-dimensional (2D) materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a…

Ponomarev E, Ubrig N, Gutierrez Lezama I, Berger H, Morpurgo A.

Nano Letters. 2018;18(8):5146-5152

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to understand at a quantitative level how the…

Wang Z, Sapkota D, Taniguchi T, Watanabe K, Mandrus D, Morpurgo A.

Nano letters . 2018;18(7):4303-4308

Costanzo D, Zhang H, Reddy BA, Berger H, Morpurgo A.

Nature nanotechnology . 2018;13(6):483-488

Wang Z, Gutierrez Lezama I, Ubrig N, Kroner M, Gibertini M, Taniguchi T, Watanabe K, Imamoğlu A, Giannini E, Morpurgo A.

Nature Communications. 2018;9(2516)

Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which…

Costanzo D.

The existence of the first truly two-dimensional crystal was demonstrated experimentally in 2004 when Geim and Novoselov managed to isolate Graphene. The remarkable properties of this material triggered a surge of interest for 2D materials and, in recent years, the number of discovered 2D materials …

Wang L, Chepiga N, Ki D, Li L, Li F, Zhu W, Kato Y, Ovchinnikova O S, Mila F, Martin I, Mandrus D, Morpurgo A.

Physical review letters . 2017;118(25):257203

Nam YW, Ki D, Soler Delgado D, Morpurgo A.

Nature Physics. 2017;13(12):1207-1214

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to…

Ubrig N, Jo S, Philippi M, Costanzo D, Berger H, Kuzmenko A, Morpurgo A.

Nano letters. 2017;17(9):5719-5725

The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced…

Khoo JY, Morpurgo A, Levitov L.

Nano letters . 2017;17(11):7003-7008

Krupskaya Y, Rückerl F, Knupfer M, Morpurgo A.

Advanced materials interfaces. 2016;3(10):1500863

Wang L, Gutierrez Lezama I, Barreteau C, Ki D, Giannini E, Morpurgo A.

Physical review letters . 2016;117(17):176601

Gutierrez Lezama I, Reddy BA, Ubrig N, Morpurgo A.

2D materials. 2016;3(4):045016

Costanzo D, Jo S, Berger H, Morpurgo A.

Nature nanotechnology. 2016;11(4):339-344

Nam YW, Ki D, Koshino M, McCann E, Morpurgo A.

2D materials. 2016;3(4):045014

Fraboni B, Fraleoni-Morgera A, Geerts Y, Morpurgo A, Podzorov V.

Advanced functional materials . 2016;26(14):2229-2232

Wang Z, Ki D, Khoo JY, Mauro D, Berger H, Levitov LS, Morpurgo A.

Physical review. X. 2016;6(4):041020

Krupskaya Y, Gutierrez Lezama I, Morpurgo A.

Advanced functional materials. 2016;26(14):2334-2340

Ponomarev E, Gutierrez Lezama I, Ubrig N, Morpurgo A.

Nano letters. 2015;15(12):8289-8294

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material,…

Krupskaya Y, Gibertini M, Marzari N, Morpurgo A.

Advanced materials. 2015;27(15):2453-2458

Jo S, Costanzo D, Berger H, Morpurgo A.

Nano letters . 2015;15(2):1197-1202

Gutierrez Lezama I, Arora A, Ubaldini A, Barreteau C, Giannini E, Potemski M, Morpurgo A.

Nano letters. 2015;15(4):2336-2342

Grushina A, Ki D, Koshino M, Nicolet AAL, Faugeras C, McCann E, Potemski M, Morpurgo A.

Nature communications. 2015;6(1):6419

Ferrari AC, Bonaccorso F, Fal'ko V, Novoselov KS, Roche S, Bøggild P, Borini S, Koppens FHL, Palermo V, Pugno N, Garrido JA, Sordan R, Bianco A, Ballerini L, Prato M, Lidorikis E, Kivioja J, Marinelli C, Ryhänen T, Morpurgo A, Coleman JN, Nicolosi V, Colombo L, Fert A, Garcia-Hernandez M, Bachtold A, Schneider GF, Guinea F, Dekker C, Barbone M, Sun Z, Galiotis C, Grigorenko AN, Konstantatos G, Kis A, Katsnelson M, Vandersypen L, Loiseau A, Morandi V, Neumaier D, Treossi E, Pellegrini V, Polini M, Tredicucci A, Williams GM, Hee Hong B, Ahn J-H, Min Kim J, Zirath H, van Wees BJ, van der Zant H, Occhipinti L, Di Matteo A, Kinloch IA, Seyller T, Quesnel E, Feng X, Teo K, Rupesinghe N, Hakonen P, Neil SRT, Tannock Q, Löfwander T, Kinaret J.

Nanoscale . 2015;7(11):4598-4810

Wang Z, Ki D, Chen H, Berger H, MacDonald AH, Morpurgo A.

Nature communications. 2015;6(1):8339

Morpurgo A.

Nature physics. 2015;11(8):625-626

Wang L, Gutierrez Lezama I, Barreteau C, Ubrig N, Giannini E, Morpurgo A.

Nature communications. 2015;:8892

Either in bulk form, or in atomically thin crystals, layered transition metal dichalcogenides continuously reveal new phenomena. The latest example is 1T'-WTe2, a semimetal found to exhibit the largest known magnetoresistance in the bulk, and predicted to become a topological insulator in…

Jo S, Ubrig N, Berger H, Kuzmenko A, Morpurgo A.

Nano letters. 2014;14(4):2019-2025

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation,…

Ki D, Fal'ko VI, Abanin DA, Morpurgo A.

Nano letters. 2014;:140310104111005

We investigate low-temperature magneto-transport in recently developed, high-quality multiterminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect with different …

Guimaraes Couto NJ, Costanzo D, Engels S, Ki D, Watanabe K, Taniguchi T, Stampfer C, Guinea F, Morpurgo A.

Physical review. X. 2014;4(4):041019

Ubrig N, Jo S, Berger H, Morpurgo A, Kuzmenko A.

Applied physics letters. 2014;104(17):171112

We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photocarriers are either electrons or holes. Both…

Gutierrez Lezama I, Ubaldini A, Longobardi M, Giannini E, Renner C, Kuzmenko A, Morpurgo A.

2D materials. 2014;1(2):021002

Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials…

Deon F, Sopic S, Morpurgo A.

Physical review letters. 2014;112(12):126803

We discuss transport measurements through graphene Andreev interferometers exhibiting reentrance of the superconducting proximity effect. We observe that at high gate voltage (VBG) the energy dependence of the Andreev conductance oscillations exhibits a scaling in agreement with theoretical…

Grushina A, Ki D, Morpurgo A.

Applied physics letters. 2013;102(22):223102

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene monolayer nearly 2 lm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature…

Ki D, Morpurgo A.

Nano letters. 2013;13(11):5165-5170

We introduce a new scheme to realize suspended, multiterminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport…

Caillier C, Ki D, Lisunova Y, Gaponenko I, Paruch P, Morpurgo A.

Nanotechnology. 2013;24(40):405201

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum…

Gutierrez Lezama I, Morpurgo A.

MRS bulletin. 2013;38(01):51-56

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of …

Morpurgo A.

Nature physics. 2013;9(9):532-533

An electrically controllable spin–orbit interaction at the surface of transition-metal dichalcogenides highlights the wealth of unexpected physics that two-dimensional systems can offer.

Minder NA, Lu S, Fratini S, Ciuchi S, Facchetti A, Morpurgo A.

Advanced materials. 2013;26(8):1254-1260

In organic field-effect transistors, the structure of the constituent molecules can be tailored to minimize the disorder experienced by charge carriers. Experiments on two perylene derivatives show that disorder can be suppressed by attaching longer core substituents – thereby reducing potential…

Minder NA, Ono S, Chen Z, Facchetti A, Morpurgo A.

Advanced materials. 2012;24(4):503-508

The Hall effect and an increase of field-effect mobility with decreasing temperature is observed in n-channel single-crystal organic field-effect transistors (OFETs). A quantitative analysis of these findings, together with results on different p-channel transistors, indicate the importance of the…

Ki D, Morpurgo A.

Physical review letters. 2012;108(26)

Suspended graphene nanoribbons formed during current annealing of suspended graphene flakes have been investigated experimentally. Transport measurements show the opening of a transport gap around charge neutrality due to the formation of ‘‘Coulomb islands'', coexisting with quantum…

Stornaiuolo D, Gariglio S, Guimaraes Couto NJ, Fete A, Caviglia A, Seyfarth G, Jaccard D, Morpurgo A, Triscone J-M.

Applied physics letters. 2012;101(22):222601

Martin I, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2012;85(14)

In a variety of rare-earth-based compounds, singlet superconductivity coexists with helical magnetism. Here we demonstrate that surfaces of these systems should generically host a finite density of zero-energy Majorana modes. In the limit of vanishing disorder, these modes lead to a divergent…

Li J, Martin I, Buttiker M, Morpurgo A.

Physica scripta. 2012;T146:014021

The electronic structures of graphene systems and topological insulators have closely related features, such as a quantized Berry phase and zero-energy edge states. The reason for these similarities is that in both systems there are two relevant orbital bands, which generate the pseudo-spin degree…

Braga D, Gutierrez Lezama I, Berger H, Morpurgo A.

Nano letters. 2012;12(10):5218-5223

We realized ambipolar field-effect transistors bycoupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons and holes and extremely low OFF-state…

Gutierrez Lezama I, Nakano M, Minder NA, Chen Z, Di Girolamo F, Facchetti A, Morpurgo A.

Nature materials. 2012;11(9):788-794

Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the heterointerfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the…

Barra M, Di Girolamo FV, Minder NA, Gutierrez Lezama I, Chen Z, Facchetti A, Morpurgo A, Cassinese A.

Applied physics letters. 2012;100(13):133301

Bias stress effects in n-channel organic field-effect transistors(OFETs) are investigated using N,N′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s (PDIF-CN2) single-crystaldevices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of…

Ye JT, Craciun MF, Koshino M, Russo S, Inoue S, Yuan HT, Shimotani H, Morpurgo A, Iwasa Y.

Proceedings of the National Academy of Sciences of the United States of America. 2011;108(32):13002-13006

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 1014 cm-2. Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of…

Sacepe B, Oostinga JB, Li J, Ubaldini A, Guimaraes Couto NJ, Giannini E, Morpurgo A.

Nature communications. 2011;2:575

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport…

Li J, Martin I, Buttiker M, Morpurgo A.

Nature physics. 2011;7(1):38-42

The edges of graphene-based systems possess unusual electronic properties, originating from the non-trivial topological structure associated with the pseudospinorial character of the electron wavefunctions. These properties, which have no analogue for electrons described by the Schrödinger…

Guimaraes Couto NJ, Sacepe B, Morpurgo A.

Physical review letters. 2011;107(22)

We report transport measurements through graphene on SrTiO3 substrates as a function of magnetic field B, carrier density n, and temperature T. The large dielectric constant of SrTiO3 very effectively screens long-range electron-electron interactions and potential fluctuations, making Dirac…

Heller I, Chatoor S, Männik J, Zevenbergen MAG, Oostinga JB, Morpurgo A, Dekker C, Lemay SG.

Nano letters. 2010;10(5):1563-1567

We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence of the noise is well described by a charge-noise model, whereas Hooge's empirical relation fails to describe the data. At low carrier density, the noise can be attributed to…

Russo S, Craciun MF, Yamamoto M, Morpurgo A, Tarucha S.

Physica. E, Low-dimensional systems and nanostructures. 2010;42(4):677-679

We report a systematic study of the total contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on many different graphene flakes we demonstrate that the contact resistance consists of a gate independent…

Naber WJM, Craciun MF, Lemmens JHJ, Arkenbout AH, Palstra TTM, Morpurgo A, van der Wiel WG.

Organic electronics. 2010;11(5):743-747

We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also…

Scherwitzl R, Zubko P, Gutierrez Lezama I, Ono S, Morpurgo A, Catalan G, Triscone J-M.

Advanced materials. 2010;22(48):5517-5520

Ono S, Minder NA, Chen Z, Facchetti A, Morpurgo A.

Applied physics letters. 2010;97(14):143307

High-performance n-type organic field-effect transistors were developed with ionic-liquid gates and N,N′′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with…

Oostinga JB, Sacepe B, Craciun MF, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2010;81(19)

We investigate magnetotransport through graphene nanoribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase in the conductance on a scale of a few tesla. This phenomenon is accompanied by a decrease in the energy scales…

Li J, Morpurgo A, Buttiker M, Martin I.

Physical review. B, Condensed matter and materials physics. 2010;82(24)

We study the correspondence between the nontrivial topological properties associated with the individual valleys of gapped bilayer graphene (BLG), as a prototypical multivalley system, and the gapless modes at its edges and other interfaces. We find that the exact connection between the…

Danneau R, Wu F, Tomi MY, Oostinga JB, Morpurgo A, Hakonen PJ.

Physical review. B, Condensed matter and materials physics. 2010;82(16)

We have investigated shot noise and conduction of graphene field-effect nanoribbon devices at low temperature. By analyzing the exponential I-V characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages 1

Nakano M, Alves H, Molinari AS, Ono S, Minder NA, Morpurgo A.

Applied physics letters. 2010;96(23):232102

We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have unmeasurably high resistance, the interface exhibits…

Morpurgo A, Trauzettel B.

Semiconductor science and technology. 2010;25(3):030301

Editorial

Caviglia A, Gariglio S, Cancellieri C, Sacepe B, Fete A, Reyren N, Gabay M, Morpurgo A, Triscone J-M.

Physical review letters. 2010;105(23):236802

We report on a study of magnetotransport in LaAlO₃/SrTiO₃ interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov–de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This…

Morpurgo A.

Nature. 2009;462(7270):170-171

Graphene continues to surprise physicists with its remarkable electronic properties. Experiments now show that electrons in the material can team up to behave as if they are only fragments of themselves.

Russo S, Craciun MF, Yamamoto M, Tarucha S, Morpurgo A.

New journal of physics. 2009;11(9):095018

We discuss transport through double-gated single- and few-layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few-layer graphene…

Liu X, Oostinga JB, Morpurgo A, Vandersypen LMK.

Physical review. B, Condensed matter and materials physics. 2009;80(12)

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn junctions are induced by the gate voltages, electrons are…

Craciun MF, Giovannetti G, Rogge S, Brocks G, Morpurgo A, van den Brink J.

Physical review. B, Condensed matter and materials physics. 2009;79(12)

We investigate electronic transport through pentacene thin films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity…

Molinari AS, Alves H, Chen Z, Facchetti A, Morpurgo A.

Journal of the American Chemical Society. 2009;131(7):2462-2463

Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum …

Kaji T, Takenobu T, Morpurgo A, Iwasa Y.

Advanced materials. 2009;21(36):3689-3693

Xie H, Alves H, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2009;80(24)

We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We present a simple, well-defined model based …

Danneau R, Wu F, Craciun MF, Russo S, Tomi MY, Salmilehto J, Morpurgo A, Hakonen PJ.

Solid state communications. 2009;149(27-28):1050-1055

We have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2_30 K. We find that for our short .L < 300 nm/ graphene samples with width over length ratio W=L > 3, the Fano factor F reaches a maximum F _ 1=3 at the Dirac point and that…

Gutierrez Lezama I, Morpurgo A.

Physical review letters. 2009;103(6)

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space charge transferred from the contacts and…

Craciun MF, Russo S, Yamamoto M, Oostinga JB, Morpurgo A, Tarucha S.

Nature nanotechnology. 2009;4(6):383-388

Graphene-based materials are promising candidates for nanoelectronic devices because very high carrier mobilities can be achieved without the use of sophisticated material preparation techniques1. However, the carrier mobilities reported for single-layer and bilayer graphene are still less than…

Fratini S, Xie H, Hulea IN, Ciuchi S, Morpurgo A.

New journal of physics. 2008;10(3):033031

Fratini S, Morpurgo A, Ciuchi S.

Journal of physics and chemistry of solids. 2008;69(9):2195-2198

Danneau R, Wu F, Craciun MF, Russo S, Tomi MY, Salmilehto J, Morpurgo A, Hakonen PJ.

Journal of low temperature physics. 2008;153(5-6):374-392

We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio W/L graphene strips, we have measured shot noise at low frequency (f=600–850 MHz) in the temperature range of 4.2–30 K. We observe a minimum conductivity of 4e2πh and a…

Alves H, Molinari AS, Xie H, Morpurgo A.

Nature materials . 2008;7(7):574-580

Russo S, Oostinga JB, Wehenkel D, Heersche HB, Sobhani SS, Vandersypen LMK, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2008;77(8):085413

Molinari AS, Gutiérrez Lezama I, Parisse P, Takenobu T, Iwasa Y, Morpurgo A.

Applied physics letters. 2008;92(13):133303

Danneau R, Wu F, Craciun MF, Russo S, Tomi MY, Salmilehto J, Morpurgo A, Hakonen PJ.

Physical review letters . 2008;100(19):196802

Martin I, Blanter YM, Morpurgo A.

Physical review letters . 2008;100(3):036804

Fratini S, Morpurgo A, Ciuchi S.

Physica status solidi. C, Current topics in solid state physics . 2008;5(3):718-721

Russo S, Tobiska J, Klapwijk TM, Morpurgo A.

Physical review letters . 2007;99(8):086601

Recher P, Trauzettel B, Rycerz A, Blanter YM, Beenakker CWJ, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2007;76(23):235404

Molinari A, Gutierrez Lezama I, Hulea IN, Russo S, Morpurgo A.

Applied physics letters. 2007;90(21):212103

Heersche HB, Jarillo-Herrero P, Oostinga JB, Vandersypen LMK, Morpurgo A.

Nature. 2007;446(7131):56-59

Oostinga JB, Heersche HB, Liu X, Morpurgo A, Vandersypen LMK.

Nature materials . 2007;7(2):151-157

Heersche HB, Jarillo-Herrero P, Oostinga JB, Vandersypen LMK, Morpurgo A.

Solid state communications . 2007;143(1-2):72-76

van den Brink J, Morpurgo A.

Nature. 2007;450(7167):177-178

Heersche HB, Jarillo-Herrero P, Oostinga JB, Vandersypen LMK, Morpurgo A.

The European physical journal. Special topics. 2007;148(1):27-37

Trauzettel B, Blanter YM, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2007;75(3):035305

Gershenson ME, Podzorov V, Morpurgo A.

Reviews of modern physics. 2006;78(3):973-989

Small-molecule organic semiconductors, together with polymers, form the basis for the emerging field of organic electronics. Despite the rapid technological progress in this area, our understanding of fundamental electronic properties of these materials remains limited. Recently developed organic…

Craciun M F, Rogge S, den Boer M-J L, Margadonna S, Prassides K, Iwasa Y, Morpurgo A.

Advanced materials. 2006;18(3):320-324

Ahn CH, Bhattacharya A, Di Ventra M, Eckstein JN, Frisbie CD, Gershenson ME, Goldman AM, Inoue IH, Mannhart J, Millis AJ, Morpurgo A, Natelson D, Triscone J-M.

Reviews of modern physics. 2006;78(4):1185-1212

Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications of the electronic and magnetic properties of materials through controlled and reversible changes of…

Morpurgo A, Guinea F.

Physical review letters. 2006;97(19):196804

Russo S, Goennenwein STB, Morpurgo A, Klapwijk TM, van Roy TM, De Boeck J.

AIP conference proceedings. 2006;850:1275. ;

Cottet A, Kontos T, Sahoo S, Man HT, Choi M-S, Belzig W, Bruder C, Morpurgo A, Schönenberger C.

Semiconductor science and technology. 2006;21(11):S78-S95

Russo S, Kroug M, Klapwijk TM, Morpurgo A.

AIP conference proceedings. 2006;850:877-878. ;

Margadonna S, Prassides K, Iwasa Y, Taguchi Y, Craciun MF, Rogge S, Morpurgo A.

Inorganic chemistry. 2006;45(26):10472-10478. ;

Hulea IN, Russo S, Molinari A, Morpurgo A.

Applied physics letters. 2006;88(11):113512

Man HT, Wever IJW, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2006;73(24):241401

Hulea IN, Fratini S, Xie H, Mulder CL, Iossad NN, Rastelli G, Ciuchi S, Morpurgo A.

Nature materials. 2006;5(12):982-986

de Boer RWI, Stassen AF, Craciun MF, Mulder CL, Molinari A, Rogge S, Morpurgo A.

Applied physics letters. 2005;86(26):262109

Craciun MF, Rogge S, Morpurgo A.

Journal of the American Chemical Society . 2005;127(35):12210-12211

van den Brink J, Brocks G, Morpurgo A.

Journal of magnetism and magnetic materials. 2005;290-291:294-297

Russo S, Kroug M, Klapwijk TM, Morpurgo A.

Physical review letters . 2005;95(2):027002

de Boer RWI, Morpurgo A.

Physical review. B, Condensed matter and materials physics. 2005;72(7):073207

de Boer RWI, Iosad NN, Stassen AF, Klapwijk TM, Morpurgo A.

Applied physics letters. 2005;86(3):032103

Goennenwein STB, Russo S, Morpurgo A, Klapwijk TM, Van Roy W, De Boeck J.

Physical review. B, Condensed matter and materials physics. 2005;71(19):193306

Man HT, Morpurgo A.

Physical review letters . 2005;95(2):026801

Meijer FE, Morpurgo A, Klapwijk TM, Nitta J.

Physical review letters . 2005;94(18):186805

Meijer F, Morpurgo A, Klapwijk T, Koga T, Nitta J.

Physical review. B, Condensed matter and materials physics. 2004;70(20):201307

Iosad NN, Ruis GJ, Morks EV, Morpurgo A, van der Pers NM, Alkemade PFA, Sivel VGM.

Journal of applied physics. 2004;95(12):8087-8091

Brocks G, van den Brink J, Morpurgo A.

Physical review letters . 2004;93(14):146405

Meijer FE, Nitta J, Koga T, Morpurgo A, Klapwijk TM.

Physica. E, Low-dimensional systems and nanostructures . 2004;22(1-3):402-405

Stassen AF, de Boer RWI, Iosad NN, Morpurgo A.

Applied physics letters. 2004;85(17):3899-3901

de Boer RWI, Gershenson ME, Morpurgo A, Podzorov V.

Physica status solidi. A, Applied research. 2004;201(6):1302-1331

de Boer RWI, Jochemsen M, Klapwijk TM, Morpurgo A, Niemax J, Tripathi AK, Pflaum J.

Journal of applied physics. 2004;95(3):1196-1202

Meijer FE, Morpurgo A, Klapwijk TM, Koga T, Nitta J.

Physical review. B, Condensed matter and materials physics. 2004;69(3):035308

Rep DBA, Morpurgo A, Klapwijk TM.

Organic electronics . 2003;4(4):201-207

de Boer RWI, Klapwijk TM, Morpurgo A.

Applied physics letters. 2003;83(21):4345-4347

Rep DBA, Morpurgo A, Sloof WG, Klapwijk TM.

Journal of applied physics. 2003;93(4):2082-2090

Craciun MF, Rogge S, Wismeijer DA, den Boer MJL, Klapwijk TM, Morpurgo A.

AIP conference proceedings. 2003;696(1)

Upward MD, Kouwenhoven LP, Morpurgo A, Kikugawa N, Mao ZQ, Maeno Y.

Physical review. B, Condensed matter. 2002;65(22):220512

Kervennic YV, Van der Zant HSJ, Morpurgo A, Gurevich L, Kouwenhoven LP.

Applied physics letters. 2002;80(2):321-323

Meijer FE, Morpurgo A, Klapwijk TM.

Physical review. B, Condensed matter. 2002;66(3):033107

Upward MD, Janssen JW, Gurevich L, Morpurgo A, Kouwenhoven LP.

Applied physics. A, Materials science & processing . 2001;72(S2):S253-S256

Morpurgo A, Baselmans JJA, van Wees BJ, Klapwijk TM.

Journal of low temperature physics. 2000;118(5-6):637-651

Olofsson LGM, Persson SHM, Morpurgo A, Marcus CM, Golubev D, Gunnarsson LK, Yao Y.

Journal of low temperature physics. 2000;118:343-353

Morpurgo A, Kong J, Marcus CM, Dai H.

Physica. B, Condensed matter . 2000;280(1-4):382-383

Morpurgo A, Marcus CM, Robinson DB.

Applied physics letters. 1999;74(14):2084-2086

Morpurgo A, Kong J, Marcus CM, Dai H.

Science. 1999;286(5438):263-265

Soh HT, Quate CF, Morpurgo A, Marcus CM, Kong J, Dai H.

Applied physics letters. 1999;75(5):627-629

Morpurgo A, Heida JP, Klapwijk TM, van Wees BJ, Borghs G.

Physical review letters . 1999;83(8):1701

Baselmans JJA, Morpurgo A, van Wees BJ, Klapwijk TM.

Nature. 1999;397(6714):43-45

Kong J, Zhou C, Morpurgo A, Soh HT, Quate CF, Marcus C, Dai H.

Applied physics. A, Materials science & processing . 1999;69(3):305-308

Baselmans JJA, Morpurgo A, van Wees BJ, Klapwijk TM.

Superlattices and microstructures. 1999;25(5-6):973-982

Morpurgo A, van Wees BJ, Klapwijk TM, Borghs G.

Physica. B, Condensed matter . 1998;249-251:458-461

Morpurgo A, Heida JP, Klapwijk TM, van Wees BJ, Borghs G.

Physical review letters . 1998;80(5):1050-1053

Morpurgo A, Heida JP, van Wees BJ, Klapwijk TM, Borghs G.

Solid-state electronics. 1998;42(7-8):1099-1102

Morpurgo A, Heida JP, van Wees BJ, Klapwijk TM, Borghs G.

Physica. B, Condensed matter. 1998;249-251:509-512

Morpurgo A, Klapwijk TM, van Wees BJ.

Applied physics letters. 1998;72(8):966-968

Morpurgo A, van Wees BJ, Klapwijk TM, Borghs G.

Physical review letters . 1997;79(20):4010-4013

Morpurgo A, Holl S, van Wees BJ, Klapwijk TM, Borghs G.

Physical review letters . 1997;78(13):2636-2639

Morpurgo A, van Wees BJ, Klapwijk TM, Borghs G.

Applied physics letters. 1997;70(11):1435-1437

van Wees BJ, den Hartog SG, Morpurgo A.

Physical review letters . 1996;76(8):1402

Morpurgo A, Beltram F.

Physical review. B, Condensed matter. 1994;50(2):1325-1328

Grushina A.

This Thesis presents experimental results of quantum transport measurements on high quality (HQ) suspended graphene devices. A high-precision transfer technique for graphene flakes was developed and used to fabricate a suspended HQ graphene device with additional bottom gate structure. The behavior …

Sopic S.

The experimental results presented in this thesis show how the use of graphene provides new opportunities to investigate unexplored aspects of superconducting proximity effect (SPE). The interplay between decoherence and superconductivity is addressed by investigating the reentrance of SPE in…

Minder NA.

In this thesis we experimentally study the intrinsic charge transport properties in n-channel organic field-effect transistors and its disorder-induced suppression. We observe that certain molecular and crystal structures are beneficial for minimizing the disorder experienced by charge carriers and …

Guimaraes Couto NJ.

In this thesis we experimentally study charge transport through nano-devices made of graphene and topological insulators. In both these materials the low energy electronic states can be described by the Dirac equation. From systematic transport investigations of graphene devices on top of different …

Gutierrez Lezama I.

Dans cette thèse nous présentons les résultats expérimentaux obtenus à partir d'une série d'études systématiques, mesures sur des transistors à effet de champ, du transport électronique effectuées sur des cristaux moléculaires organiques. La discussion porte sur des…