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Cao C, Melegari M, Philippi M, Domaretskiy D, Ubrig N, Gutierrez Lezama I, Morpurgo A.
Advanced materials. 2023;:2211993
Archive ouverte UNIGELopez Paz SA, Guguchia Z, Pomjakushin VY, Witteveen C, Cervellino A, Luetkens H, Casati N, Morpurgo A, von Rohr F.
Nature communications. 2022;13(1):4745
The van-der-Waals material CrSBr stands out as a promising two-dimensional magnet. Here, we report on its detailed magnetic and structural characteristics. We evidence that it undergoes a transition to an A-type antiferromagnetic state below T N ≈ 140 K with a pronounced…
Archive ouverte UNIGEHenck H, Mauro D, Domaretskiy D, Philippi M, Memaran S, Zheng W, Lu Z, Shcherbakov D, Lau CN, Smirnov D, Balicas L, Watanabe K, Taniguchi T, Fal’ko VI, Gutierrez Lezama I, Ubrig N, Morpurgo A.
Nature communications. 2022;13(1):3917
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important…
Archive ouverte UNIGESoler Delgado D, Yao F, Dumcenco D, Giannini E, Li J, Occhialini CA, Comin R, Ubrig N, Morpurgo A.
Nano letters. 2022;:2c01361
Archive ouverte UNIGEWu F, Gutierrez Lezama I, Lopéz‐Paz SA, Gibertini M, Watanabe K, Taniguchi T, Von Rohr FO, Ubrig N, Morpurgo A.
Advanced materials. 2022;:2109759
We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured…
Archive ouverte UNIGEDomaretskiy D, Philippi M, Gibertini M, Ubrig N, Gutierrez Lezama I, Morpurgo A.
Nature nanotechnology. 2022;
Archive ouverte UNIGEPreprints
Gatti G, Issing J, Rademaker L, Margot F, Jong TA de, Molen SJ van der, Teyssier J, Kim TK, Watson MD, Cacho C, Dudin P, Avila J, Edwards KC, Paruch P, Ubrig N, Gutierrez Lezama I, Morpurgo A, Tamai A, Baumberger F.
2022.
The recent observation of correlated phases in transition metal dichalcogenide moir\'e systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and…
Archive ouverte UNIGEDoctoral Thesis
Domaretskiy D.
2-dimensional (2D) materials have stunned the scientific community and have triggered immense interest due to their unique optoelectronic properties. These properties strongly depend on the thickness of 2D layers and can be controlled by an externally applied voltage providing experimental…
Archive ouverte UNIGEScientific Articles
Domaretskiy D, Ubrig N, Gutierrez Lezama I, Tran M, Morpurgo A.
2D Materials. 2021;8(045016)
Archive ouverte UNIGEGutierrez Lezama I, Ubrig N, Ponomarev E, Morpurgo A.
Nature Reviews Physics. 2021;
Reliable and precise measurements of the relative energy of band edges in 2D semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. However, commonly employed techniques such as optical studies and scanning…
Archive ouverte UNIGEWang Z, Gutierrez Lezama I, Dumcenco D, Ubrig N, Taniguchi T, Watanabe K, Giannini E, Gibertini M, Morpurgo A.
Nature communications. 2021;12(1):6659
Recent experiments on van der Waals antiferromagnets have shown that measuring the temperature ( T ) and magnetic field ( H ) dependence of the conductance allows their magnetic phase diagram to be mapped. Similarly, experiments on ferromagnetic CrBr 3 barriers enabled the Curie…
Archive ouverte UNIGEBerthod C, Zhang H, Morpurgo A, Giamarchi T.
Physical Review Research. 2021;3(4):043036
Impressive progress in the control of atomically thin crystals is now enabling the realization of gated structures in which two electrodes are separated by atomic scale distances. The electrical capacitance of these structures is determined by phenomena that are not relevant in capacitors with…
Archive ouverte UNIGEScientific Articles
Ubrig N, Ponomarev E, Zultak J, Domaretskiy D, Zólyomi V, Terry D, Howarth J, Gutierrez Lezama I, Zhukov A, Kudrynskyi ZR, Kovalyuk ZD, Patané A, Taniguchi T, Watanabe K, Gorbachev RV, Fal'ko VI, Morpurgo A.
Nature Materials. 2020;
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral…
Archive ouverte UNIGEDelhomme A, Vaclavkova D, Slobodeniuk A, Orlita M, Potemski M, Basko DM, Watanabe K, Taniguchi T, Mauro D, Barreteau C, Giannini E, Morpurgo A, Ubrig N, Faugeras C.
2D Materials. 2020;7(041002)
Optical selection rules in monolayers of transition metal dichalcogenides and of their heterostructures are determined by the conservation of the z-component of the total angular momentum—J Z = L Z +S Z – associated with the C3 rotational lattice symmetry which assumes half integer values…
Archive ouverte UNIGETenasini G, Martino E, Ubrig N, Ghimire NJ, Berger H, Zaharko O, Wu F, Mitchell JF, Martin I, Forró L, Morpurgo A.
Physical Review Research. 2020;2(2):023051
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can, in principle, be observed. Here we present experiments on microfabricated devices…
Archive ouverte UNIGEUbrig N, Wang Z, Teyssier J, Taniguchi T, Watanabe K, Giannini E, Morpurgo A, Gibertini M.
2D Materials. 2020;7(1):015007
Chromium triiodide, CrI3, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a …
Archive ouverte UNIGEMauro D, Henck H, Gibertini M, Filippone M, Giannini E, Gutierrez Lezama I, Morpurgo A.
2D Materials. 2020;7(025042)
Monolayer jacutingaite (Pt2HgSe3) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow…
Archive ouverte UNIGELong G, Henck H, Gibertini M, Dumcenco D, Wang Z, Taniguchi T, Watanabe K, Giannini E, Morpurgo A.
Nano letters . 2020;20(4):2452-2459
Archive ouverte UNIGEReddy BA, Ponomarev E, Gutierrez Lezama I, Ubrig N, Barreteau C, Giannini E, Morpurgo A.
Nano Letters. 2020;20(2):1322-1328
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided…
Archive ouverte UNIGEDoctoral Thesis
Soler Delgado D.
Graphene is a layer of carbon atoms arranged in a honeycomb lattice. In 2004, Andre Geim and Konstantin Novoselov made a revolutionary breakthrough as they were able to isolate graphene giving rise to a cascade of experiments that revealed its unique electronic properties. Electron interaction in…
Archive ouverte UNIGEPhilippi M.
In 2004, A. Geim and K. Novoselov realized the first isolation of a one-atom-thick material, graphene. The discovery of graphene, which was immediately followed by that of many other 2D materials with a large variety of physical properties, has paved the way to study physical properties in…
Archive ouverte UNIGEScientific Articles
Zhang H, Berthod C, Berger H, Giamarchi T, Morpurgo A.
Nano Letters. 2019;
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in these systems are not understood. We…
Archive ouverte UNIGEWang Z, Gibertini M, Dumcenco D, Taniguchi T, Watanabe K, Giannini E, Morpurgo A.
Nature nanotechnology . 2019;14(12):1116-1122
Archive ouverte UNIGESohier T, Ponomarev E, Gibertini M, Berger H, Marzari N, Ubrig N, Morpurgo A.
Physical Review X. 2019;9(3):031019
We report a combined experimental and theoretical investigation that reveals a new mechanism responsible for the enhancement of electron-phonon coupling in doped semiconductors in which multiple inequivalent valleys are simultaneously populated. Using Raman spectroscopy on ionic-liquid-gated…
Archive ouverte UNIGEGibertini M, Koperski M, Morpurgo A, Novoselov KS.
Nature nanotechnology . 2019;14(5):408-419
Archive ouverte UNIGEThiel L, Wang Z, Tschudin MA, Rohner D, Gutierrez Lezama I, Ubrig N, Gibertini M, Giannini E, Morpurgo A, Maletinsky P.
Science. 2019;364(6444):973-976
The discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has generated widespread interest. Making further progress in this area requires quantitative knowledge of the magnetic properties of vdW magnets at the nanoscale. We used scanning single-spin magnetometry based on …
Archive ouverte UNIGEDoctoral Thesis
Ponomarev E.
The isolation of single-atom-thick layer of graphite, very well known now as graphene, done by A.Geim and K.Novoselov (Nobel prize in physics 2010) in 2004 was a truly revolutionary breakthrough which opened up a new field of research and had a pronounced impact on multiple domains ranging from…
Archive ouverte UNIGEScientific Articles
Nam YW, Ki D, Soler Delgado D, Morpurgo A.
Science. 2018;362(6412):324-328.
Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state whose origin remains to be understood. We show that a finite-temperature second-order phase transition occurs in multilayers whose critical temperature (Tc) increases from 12…
Archive ouverte UNIGEPonomarev E, Pasztor A, Waelchli A, Scarfato A, Ubrig N, Renner C, Morpurgo A.
ACS Nano. 2018;
Archive ouverte UNIGEPhilippi M, Gutierrez Lezama I, Ubrig N, Morpurgo A.
Applied Physics Letters. 2018;113(3):033502
We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe2 crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages (VG 0. For VG
Archive ouverte UNIGECucchi I, Gutierrez Lezama I, Cappelli E, Mckeown Walker S, Bruno FY, Tenasini G, Wang L, Ubrig N, Barreteau C, Giannini E, Gibertini M, Tamai A, Morpurgo A, Baumberger F.
Nano Letters. 2018;
Two-dimensional crystals of semi-metallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few-layer 1T′-WTe2 and of a quantum spin Hall state in monolayers of the same material. Understanding these…
Archive ouverte UNIGEMartinez Castro J, Mauro D, Pasztor A, Gutierrez Lezama I, Scarfato A, Morpurgo A, Renner C.
Nano Letters. 2018;18(11):6696-6702
Many atomically thin exfoliated two-dimensional (2D) materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a…
Archive ouverte UNIGEPonomarev E, Ubrig N, Gutierrez Lezama I, Berger H, Morpurgo A.
Nano Letters. 2018;18(8):5146-5152
Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to understand at a quantitative level how the…
Archive ouverte UNIGEWang Z, Sapkota D, Taniguchi T, Watanabe K, Mandrus D, Morpurgo A.
Nano letters . 2018;18(7):4303-4308
Archive ouverte UNIGECostanzo D, Zhang H, Reddy BA, Berger H, Morpurgo A.
Nature nanotechnology . 2018;13(6):483-488
Archive ouverte UNIGEWang Z, Gutierrez Lezama I, Ubrig N, Kroner M, Gibertini M, Taniguchi T, Watanabe K, Imamoğlu A, Giannini E, Morpurgo A.
Nature Communications. 2018;9(2516)
Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which…
Archive ouverte UNIGEDoctoral Thesis
Costanzo D.
The existence of the first truly two-dimensional crystal was demonstrated experimentally in 2004 when Geim and Novoselov managed to isolate Graphene. The remarkable properties of this material triggered a surge of interest for 2D materials and, in recent years, the number of discovered 2D materials …
Archive ouverte UNIGEScientific Articles
Wang L, Chepiga N, Ki D, Li L, Li F, Zhu W, Kato Y, Ovchinnikova O S, Mila F, Martin I, Mandrus D, Morpurgo A.
Physical review letters . 2017;118(25):257203
Archive ouverte UNIGENam YW, Ki D, Soler Delgado D, Morpurgo A.
Nature Physics. 2017;13(12):1207-1214
Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to…
Archive ouverte UNIGEUbrig N, Jo S, Philippi M, Costanzo D, Berger H, Kuzmenko A, Morpurgo A.
Nano letters. 2017;17(9):5719-5725
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced…
Archive ouverte UNIGEKhoo JY, Morpurgo A, Levitov L.
Nano letters . 2017;17(11):7003-7008
Archive ouverte UNIGEScientific Articles
Krupskaya Y, Rückerl F, Knupfer M, Morpurgo A.
Advanced materials interfaces. 2016;3(10):1500863
Archive ouverte UNIGEWang L, Gutierrez Lezama I, Barreteau C, Ki D, Giannini E, Morpurgo A.
Physical review letters . 2016;117(17):176601
Archive ouverte UNIGEGutierrez Lezama I, Reddy BA, Ubrig N, Morpurgo A.
2D materials. 2016;3(4):045016
Archive ouverte UNIGECostanzo D, Jo S, Berger H, Morpurgo A.
Nature nanotechnology. 2016;11(4):339-344
Archive ouverte UNIGENam YW, Ki D, Koshino M, McCann E, Morpurgo A.
2D materials. 2016;3(4):045014
Archive ouverte UNIGEFraboni B, Fraleoni-Morgera A, Geerts Y, Morpurgo A, Podzorov V.
Advanced functional materials . 2016;26(14):2229-2232
Archive ouverte UNIGEWang Z, Ki D, Khoo JY, Mauro D, Berger H, Levitov LS, Morpurgo A.
Physical review. X. 2016;6(4):041020
Archive ouverte UNIGEKrupskaya Y, Gutierrez Lezama I, Morpurgo A.
Advanced functional materials. 2016;26(14):2334-2340
Archive ouverte UNIGEScientific Articles
Ponomarev E, Gutierrez Lezama I, Ubrig N, Morpurgo A.
Nano letters. 2015;15(12):8289-8294
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material,…
Archive ouverte UNIGEKrupskaya Y, Gibertini M, Marzari N, Morpurgo A.
Advanced materials. 2015;27(15):2453-2458
Archive ouverte UNIGEJo S, Costanzo D, Berger H, Morpurgo A.
Nano letters . 2015;15(2):1197-1202
Archive ouverte UNIGEGutierrez Lezama I, Arora A, Ubaldini A, Barreteau C, Giannini E, Potemski M, Morpurgo A.
Nano letters. 2015;15(4):2336-2342
Archive ouverte UNIGEGrushina A, Ki D, Koshino M, Nicolet AAL, Faugeras C, McCann E, Potemski M, Morpurgo A.
Nature communications. 2015;6(1):6419
Archive ouverte UNIGEFerrari AC, Bonaccorso F, Fal'ko V, Novoselov KS, Roche S, Bøggild P, Borini S, Koppens FHL, Palermo V, Pugno N, Garrido JA, Sordan R, Bianco A, Ballerini L, Prato M, Lidorikis E, Kivioja J, Marinelli C, Ryhänen T, Morpurgo A, Coleman JN, Nicolosi V, Colombo L, Fert A, Garcia-Hernandez M, Bachtold A, Schneider GF, Guinea F, Dekker C, Barbone M, Sun Z, Galiotis C, Grigorenko AN, Konstantatos G, Kis A, Katsnelson M, Vandersypen L, Loiseau A, Morandi V, Neumaier D, Treossi E, Pellegrini V, Polini M, Tredicucci A, Williams GM, Hee Hong B, Ahn J-H, Min Kim J, Zirath H, van Wees BJ, van der Zant H, Occhipinti L, Di Matteo A, Kinloch IA, Seyller T, Quesnel E, Feng X, Teo K, Rupesinghe N, Hakonen P, Neil SRT, Tannock Q, Löfwander T, Kinaret J.
Nanoscale . 2015;7(11):4598-4810
Archive ouverte UNIGEWang Z, Ki D, Chen H, Berger H, MacDonald AH, Morpurgo A.
Nature communications. 2015;6(1):8339
Archive ouverte UNIGEWang L, Gutierrez Lezama I, Barreteau C, Ubrig N, Giannini E, Morpurgo A.
Nature communications. 2015;:8892
Either in bulk form, or in atomically thin crystals, layered transition metal dichalcogenides continuously reveal new phenomena. The latest example is 1T'-WTe2, a semimetal found to exhibit the largest known magnetoresistance in the bulk, and predicted to become a topological insulator in…
Archive ouverte UNIGEJo S, Ubrig N, Berger H, Kuzmenko A, Morpurgo A.
Nano letters. 2014;14(4):2019-2025
We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation,…
Archive ouverte UNIGEKi D, Fal'ko VI, Abanin DA, Morpurgo A.
Nano letters. 2014;:140310104111005
We investigate low-temperature magneto-transport in recently developed, high-quality multiterminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect with different …
Archive ouverte UNIGEGuimaraes Couto NJ, Costanzo D, Engels S, Ki D, Watanabe K, Taniguchi T, Stampfer C, Guinea F, Morpurgo A.
Physical review. X. 2014;4(4):041019
Archive ouverte UNIGEUbrig N, Jo S, Berger H, Morpurgo A, Kuzmenko A.
Applied physics letters. 2014;104(17):171112
We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photocarriers are either electrons or holes. Both…
Archive ouverte UNIGEGutierrez Lezama I, Ubaldini A, Longobardi M, Giannini E, Renner C, Kuzmenko A, Morpurgo A.
2D materials. 2014;1(2):021002
Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials…
Archive ouverte UNIGEDeon F, Sopic S, Morpurgo A.
Physical review letters. 2014;112(12):126803
We discuss transport measurements through graphene Andreev interferometers exhibiting reentrance of the superconducting proximity effect. We observe that at high gate voltage (VBG) the energy dependence of the Andreev conductance oscillations exhibits a scaling in agreement with theoretical…
Archive ouverte UNIGEGrushina A, Ki D, Morpurgo A.
Applied physics letters. 2013;102(22):223102
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene monolayer nearly 2 lm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature…
Archive ouverte UNIGEKi D, Morpurgo A.
Nano letters. 2013;13(11):5165-5170
We introduce a new scheme to realize suspended, multiterminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport…
Archive ouverte UNIGECaillier C, Ki D, Lisunova Y, Gaponenko I, Paruch P, Morpurgo A.
Nanotechnology. 2013;24(40):405201
To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum…
Archive ouverte UNIGEGutierrez Lezama I, Morpurgo A.
MRS bulletin. 2013;38(01):51-56
Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of …
Archive ouverte UNIGEMorpurgo A.
Nature physics. 2013;9(9):532-533
An electrically controllable spin–orbit interaction at the surface of transition-metal dichalcogenides highlights the wealth of unexpected physics that two-dimensional systems can offer.
Archive ouverte UNIGEMinder NA, Lu S, Fratini S, Ciuchi S, Facchetti A, Morpurgo A.
Advanced materials. 2013;26(8):1254-1260
In organic field-effect transistors, the structure of the constituent molecules can be tailored to minimize the disorder experienced by charge carriers. Experiments on two perylene derivatives show that disorder can be suppressed by attaching longer core substituents – thereby reducing potential…
Archive ouverte UNIGEMinder NA, Ono S, Chen Z, Facchetti A, Morpurgo A.
Advanced materials. 2012;24(4):503-508
The Hall effect and an increase of field-effect mobility with decreasing temperature is observed in n-channel single-crystal organic field-effect transistors (OFETs). A quantitative analysis of these findings, together with results on different p-channel transistors, indicate the importance of the…
Archive ouverte UNIGEKi D, Morpurgo A.
Physical review letters. 2012;108(26)
Suspended graphene nanoribbons formed during current annealing of suspended graphene flakes have been investigated experimentally. Transport measurements show the opening of a transport gap around charge neutrality due to the formation of ‘‘Coulomb islands'', coexisting with quantum…
Archive ouverte UNIGEStornaiuolo D, Gariglio S, Guimaraes Couto NJ, Fete A, Caviglia A, Seyfarth G, Jaccard D, Morpurgo A, Triscone J-M.
Applied physics letters. 2012;101(22):222601
Archive ouverte UNIGEMartin I, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2012;85(14)
In a variety of rare-earth-based compounds, singlet superconductivity coexists with helical magnetism. Here we demonstrate that surfaces of these systems should generically host a finite density of zero-energy Majorana modes. In the limit of vanishing disorder, these modes lead to a divergent…
Archive ouverte UNIGELi J, Martin I, Buttiker M, Morpurgo A.
Physica scripta. 2012;T146:014021
The electronic structures of graphene systems and topological insulators have closely related features, such as a quantized Berry phase and zero-energy edge states. The reason for these similarities is that in both systems there are two relevant orbital bands, which generate the pseudo-spin degree…
Archive ouverte UNIGEBraga D, Gutierrez Lezama I, Berger H, Morpurgo A.
Nano letters. 2012;12(10):5218-5223
We realized ambipolar field-effect transistors bycoupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons and holes and extremely low OFF-state…
Archive ouverte UNIGEGutierrez Lezama I, Nakano M, Minder NA, Chen Z, Di Girolamo F, Facchetti A, Morpurgo A.
Nature materials. 2012;11(9):788-794
Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the heterointerfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the…
Archive ouverte UNIGEBarra M, Di Girolamo FV, Minder NA, Gutierrez Lezama I, Chen Z, Facchetti A, Morpurgo A, Cassinese A.
Applied physics letters. 2012;100(13):133301
Bias stress effects in n-channel organic field-effect transistors(OFETs) are investigated using N,N′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s (PDIF-CN2) single-crystaldevices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of…
Archive ouverte UNIGEYe JT, Craciun MF, Koshino M, Russo S, Inoue S, Yuan HT, Shimotani H, Morpurgo A, Iwasa Y.
Proceedings of the National Academy of Sciences of the United States of America. 2011;108(32):13002-13006
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 1014 cm-2. Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of…
Archive ouverte UNIGESacepe B, Oostinga JB, Li J, Ubaldini A, Guimaraes Couto NJ, Giannini E, Morpurgo A.
Nature communications. 2011;2:575
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport…
Archive ouverte UNIGELi J, Martin I, Buttiker M, Morpurgo A.
Nature physics. 2011;7(1):38-42
The edges of graphene-based systems possess unusual electronic properties, originating from the non-trivial topological structure associated with the pseudospinorial character of the electron wavefunctions. These properties, which have no analogue for electrons described by the Schrödinger…
Archive ouverte UNIGEGuimaraes Couto NJ, Sacepe B, Morpurgo A.
Physical review letters. 2011;107(22)
We report transport measurements through graphene on SrTiO3 substrates as a function of magnetic field B, carrier density n, and temperature T. The large dielectric constant of SrTiO3 very effectively screens long-range electron-electron interactions and potential fluctuations, making Dirac…
Archive ouverte UNIGEHeller I, Chatoor S, Männik J, Zevenbergen MAG, Oostinga JB, Morpurgo A, Dekker C, Lemay SG.
Nano letters. 2010;10(5):1563-1567
We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence of the noise is well described by a charge-noise model, whereas Hooge's empirical relation fails to describe the data. At low carrier density, the noise can be attributed to…
Archive ouverte UNIGERusso S, Craciun MF, Yamamoto M, Morpurgo A, Tarucha S.
Physica. E, Low-dimensional systems and nanostructures. 2010;42(4):677-679
We report a systematic study of the total contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on many different graphene flakes we demonstrate that the contact resistance consists of a gate independent…
Archive ouverte UNIGENaber WJM, Craciun MF, Lemmens JHJ, Arkenbout AH, Palstra TTM, Morpurgo A, van der Wiel WG.
Organic electronics. 2010;11(5):743-747
We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also…
Archive ouverte UNIGEScherwitzl R, Zubko P, Gutierrez Lezama I, Ono S, Morpurgo A, Catalan G, Triscone J-M.
Advanced materials. 2010;22(48):5517-5520
Archive ouverte UNIGEOno S, Minder NA, Chen Z, Facchetti A, Morpurgo A.
Applied physics letters. 2010;97(14):143307
High-performance n-type organic field-effect transistors were developed with ionic-liquid gates and N,N′′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with…
Archive ouverte UNIGEOostinga JB, Sacepe B, Craciun MF, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2010;81(19)
We investigate magnetotransport through graphene nanoribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase in the conductance on a scale of a few tesla. This phenomenon is accompanied by a decrease in the energy scales…
Archive ouverte UNIGELi J, Morpurgo A, Buttiker M, Martin I.
Physical review. B, Condensed matter and materials physics. 2010;82(24)
We study the correspondence between the nontrivial topological properties associated with the individual valleys of gapped bilayer graphene (BLG), as a prototypical multivalley system, and the gapless modes at its edges and other interfaces. We find that the exact connection between the…
Archive ouverte UNIGEDanneau R, Wu F, Tomi MY, Oostinga JB, Morpurgo A, Hakonen PJ.
Physical review. B, Condensed matter and materials physics. 2010;82(16)
We have investigated shot noise and conduction of graphene field-effect nanoribbon devices at low temperature. By analyzing the exponential I-V characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages 1
Archive ouverte UNIGENakano M, Alves H, Molinari AS, Ono S, Minder NA, Morpurgo A.
Applied physics letters. 2010;96(23):232102
We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have unmeasurably high resistance, the interface exhibits…
Archive ouverte UNIGEMorpurgo A, Trauzettel B.
Semiconductor science and technology. 2010;25(3):030301
Editorial
Archive ouverte UNIGECaviglia A, Gariglio S, Cancellieri C, Sacepe B, Fete A, Reyren N, Gabay M, Morpurgo A, Triscone J-M.
Physical review letters. 2010;105(23):236802
We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov–de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This…
Archive ouverte UNIGEMorpurgo A.
Nature. 2009;462(7270):170-171
Graphene continues to surprise physicists with its remarkable electronic properties. Experiments now show that electrons in the material can team up to behave as if they are only fragments of themselves.
Archive ouverte UNIGERusso S, Craciun MF, Yamamoto M, Tarucha S, Morpurgo A.
New journal of physics. 2009;11(9):095018
We discuss transport through double-gated single- and few-layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few-layer graphene…
Archive ouverte UNIGELiu X, Oostinga JB, Morpurgo A, Vandersypen LMK.
Physical review. B, Condensed matter and materials physics. 2009;80(12)
Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn junctions are induced by the gate voltages, electrons are…
Archive ouverte UNIGECraciun MF, Giovannetti G, Rogge S, Brocks G, Morpurgo A, van den Brink J.
Physical review. B, Condensed matter and materials physics. 2009;79(12)
We investigate electronic transport through pentacene thin films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity…
Archive ouverte UNIGEMolinari AS, Alves H, Chen Z, Facchetti A, Morpurgo A.
Journal of the American Chemical Society. 2009;131(7):2462-2463
Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum …
Archive ouverte UNIGEKaji T, Takenobu T, Morpurgo A, Iwasa Y.
Advanced materials. 2009;21(36):3689-3693
Archive ouverte UNIGEXie H, Alves H, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2009;80(24)
We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We present a simple, well-defined model based …
Archive ouverte UNIGEDanneau R, Wu F, Craciun MF, Russo S, Tomi MY, Salmilehto J, Morpurgo A, Hakonen PJ.
Solid state communications. 2009;149(27-28):1050-1055
We have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2_30 K. We find that for our short .L < 300 nm/ graphene samples with width over length ratio W=L > 3, the Fano factor F reaches a maximum F _ 1=3 at the Dirac point and that…
Archive ouverte UNIGEGutierrez Lezama I, Morpurgo A.
Physical review letters. 2009;103(6)
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space charge transferred from the contacts and…
Archive ouverte UNIGECraciun MF, Russo S, Yamamoto M, Oostinga JB, Morpurgo A, Tarucha S.
Nature nanotechnology. 2009;4(6):383-388
Graphene-based materials are promising candidates for nanoelectronic devices because very high carrier mobilities can be achieved without the use of sophisticated material preparation techniques1. However, the carrier mobilities reported for single-layer and bilayer graphene are still less than…
Archive ouverte UNIGEFratini S, Xie H, Hulea IN, Ciuchi S, Morpurgo A.
New journal of physics. 2008;10(3):033031
Archive ouverte UNIGEFratini S, Morpurgo A, Ciuchi S.
Journal of physics and chemistry of solids. 2008;69(9):2195-2198
Archive ouverte UNIGEDanneau R, Wu F, Craciun MF, Russo S, Tomi MY, Salmilehto J, Morpurgo A, Hakonen PJ.
Journal of low temperature physics. 2008;153(5-6):374-392
We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio W/L graphene strips, we have measured shot noise at low frequency (f=600–850 MHz) in the temperature range of 4.2–30 K. We observe a minimum conductivity of 4e2πh and a…
Archive ouverte UNIGEAlves H, Molinari AS, Xie H, Morpurgo A.
Nature materials . 2008;7(7):574-580
Archive ouverte UNIGERusso S, Oostinga JB, Wehenkel D, Heersche HB, Sobhani SS, Vandersypen LMK, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2008;77(8):085413
Archive ouverte UNIGEMolinari AS, Gutiérrez Lezama I, Parisse P, Takenobu T, Iwasa Y, Morpurgo A.
Applied physics letters. 2008;92(13):133303
Archive ouverte UNIGEDanneau R, Wu F, Craciun MF, Russo S, Tomi MY, Salmilehto J, Morpurgo A, Hakonen PJ.
Physical review letters . 2008;100(19):196802
Archive ouverte UNIGEMartin I, Blanter YM, Morpurgo A.
Physical review letters . 2008;100(3):036804
Archive ouverte UNIGEFratini S, Morpurgo A, Ciuchi S.
Physica status solidi. C, Current topics in solid state physics . 2008;5(3):718-721
Archive ouverte UNIGERusso S, Tobiska J, Klapwijk TM, Morpurgo A.
Physical review letters . 2007;99(8):086601
Archive ouverte UNIGERecher P, Trauzettel B, Rycerz A, Blanter YM, Beenakker CWJ, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2007;76(23):235404
Archive ouverte UNIGEMolinari A, Gutierrez Lezama I, Hulea IN, Russo S, Morpurgo A.
Applied physics letters. 2007;90(21):212103
Archive ouverte UNIGEHeersche HB, Jarillo-Herrero P, Oostinga JB, Vandersypen LMK, Morpurgo A.
Nature. 2007;446(7131):56-59
Archive ouverte UNIGEOostinga JB, Heersche HB, Liu X, Morpurgo A, Vandersypen LMK.
Nature materials . 2007;7(2):151-157
Archive ouverte UNIGEHeersche HB, Jarillo-Herrero P, Oostinga JB, Vandersypen LMK, Morpurgo A.
Solid state communications . 2007;143(1-2):72-76
Archive ouverte UNIGEHeersche HB, Jarillo-Herrero P, Oostinga JB, Vandersypen LMK, Morpurgo A.
The European physical journal. Special topics. 2007;148(1):27-37
Archive ouverte UNIGETrauzettel B, Blanter YM, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2007;75(3):035305
Archive ouverte UNIGEGershenson ME, Podzorov V, Morpurgo A.
Reviews of modern physics. 2006;78(3):973-989
Small-molecule organic semiconductors, together with polymers, form the basis for the emerging field of organic electronics. Despite the rapid technological progress in this area, our understanding of fundamental electronic properties of these materials remains limited. Recently developed organic…
Archive ouverte UNIGECraciun M F, Rogge S, den Boer M-J L, Margadonna S, Prassides K, Iwasa Y, Morpurgo A.
Advanced materials. 2006;18(3):320-324
Archive ouverte UNIGEAhn CH, Bhattacharya A, Di Ventra M, Eckstein JN, Frisbie CD, Gershenson ME, Goldman AM, Inoue IH, Mannhart J, Millis AJ, Morpurgo A, Natelson D, Triscone J-M.
Reviews of modern physics. 2006;78(4):1185-1212
Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications of the electronic and magnetic properties of materials through controlled and reversible changes of…
Archive ouverte UNIGEMorpurgo A, Guinea F.
Physical review letters. 2006;97(19):196804
Archive ouverte UNIGERusso S, Goennenwein STB, Morpurgo A, Klapwijk TM, van Roy TM, De Boeck J.
AIP conference proceedings. 2006;850:1275. ;
Archive ouverte UNIGECottet A, Kontos T, Sahoo S, Man HT, Choi M-S, Belzig W, Bruder C, Morpurgo A, Schönenberger C.
Semiconductor science and technology. 2006;21(11):S78-S95
Archive ouverte UNIGERusso S, Kroug M, Klapwijk TM, Morpurgo A.
AIP conference proceedings. 2006;850:877-878. ;
Archive ouverte UNIGEMargadonna S, Prassides K, Iwasa Y, Taguchi Y, Craciun MF, Rogge S, Morpurgo A.
Inorganic chemistry. 2006;45(26):10472-10478. ;
Archive ouverte UNIGEHulea IN, Russo S, Molinari A, Morpurgo A.
Applied physics letters. 2006;88(11):113512
Archive ouverte UNIGEMan HT, Wever IJW, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2006;73(24):241401
Archive ouverte UNIGEHulea IN, Fratini S, Xie H, Mulder CL, Iossad NN, Rastelli G, Ciuchi S, Morpurgo A.
Nature materials. 2006;5(12):982-986
Archive ouverte UNIGEde Boer RWI, Stassen AF, Craciun MF, Mulder CL, Molinari A, Rogge S, Morpurgo A.
Applied physics letters. 2005;86(26):262109
Archive ouverte UNIGECraciun MF, Rogge S, Morpurgo A.
Journal of the American Chemical Society . 2005;127(35):12210-12211
Archive ouverte UNIGEvan den Brink J, Brocks G, Morpurgo A.
Journal of magnetism and magnetic materials. 2005;290-291:294-297
Archive ouverte UNIGERusso S, Kroug M, Klapwijk TM, Morpurgo A.
Physical review letters . 2005;95(2):027002
Archive ouverte UNIGEde Boer RWI, Morpurgo A.
Physical review. B, Condensed matter and materials physics. 2005;72(7):073207
Archive ouverte UNIGEde Boer RWI, Iosad NN, Stassen AF, Klapwijk TM, Morpurgo A.
Applied physics letters. 2005;86(3):032103
Archive ouverte UNIGEGoennenwein STB, Russo S, Morpurgo A, Klapwijk TM, Van Roy W, De Boeck J.
Physical review. B, Condensed matter and materials physics. 2005;71(19):193306
Archive ouverte UNIGEMan HT, Morpurgo A.
Physical review letters . 2005;95(2):026801
Archive ouverte UNIGEMeijer FE, Morpurgo A, Klapwijk TM, Nitta J.
Physical review letters . 2005;94(18):186805
Archive ouverte UNIGEMeijer F, Morpurgo A, Klapwijk T, Koga T, Nitta J.
Physical review. B, Condensed matter and materials physics. 2004;70(20):201307
Archive ouverte UNIGEIosad NN, Ruis GJ, Morks EV, Morpurgo A, van der Pers NM, Alkemade PFA, Sivel VGM.
Journal of applied physics. 2004;95(12):8087-8091
Archive ouverte UNIGEBrocks G, van den Brink J, Morpurgo A.
Physical review letters . 2004;93(14):146405
Archive ouverte UNIGEMeijer FE, Nitta J, Koga T, Morpurgo A, Klapwijk TM.
Physica. E, Low-dimensional systems and nanostructures . 2004;22(1-3):402-405
Archive ouverte UNIGEStassen AF, de Boer RWI, Iosad NN, Morpurgo A.
Applied physics letters. 2004;85(17):3899-3901
Archive ouverte UNIGEde Boer RWI, Gershenson ME, Morpurgo A, Podzorov V.
Physica status solidi. A, Applied research. 2004;201(6):1302-1331
Archive ouverte UNIGEde Boer RWI, Jochemsen M, Klapwijk TM, Morpurgo A, Niemax J, Tripathi AK, Pflaum J.
Journal of applied physics. 2004;95(3):1196-1202
Archive ouverte UNIGEMeijer FE, Morpurgo A, Klapwijk TM, Koga T, Nitta J.
Physical review. B, Condensed matter and materials physics. 2004;69(3):035308
Archive ouverte UNIGERep DBA, Morpurgo A, Klapwijk TM.
Organic electronics . 2003;4(4):201-207
Archive ouverte UNIGEde Boer RWI, Klapwijk TM, Morpurgo A.
Applied physics letters. 2003;83(21):4345-4347
Archive ouverte UNIGERep DBA, Morpurgo A, Sloof WG, Klapwijk TM.
Journal of applied physics. 2003;93(4):2082-2090
Archive ouverte UNIGECraciun MF, Rogge S, Wismeijer DA, den Boer MJL, Klapwijk TM, Morpurgo A.
AIP conference proceedings. 2003;696(1)
Archive ouverte UNIGEUpward MD, Kouwenhoven LP, Morpurgo A, Kikugawa N, Mao ZQ, Maeno Y.
Physical review. B, Condensed matter. 2002;65(22):220512
Archive ouverte UNIGEKervennic YV, Van der Zant HSJ, Morpurgo A, Gurevich L, Kouwenhoven LP.
Applied physics letters. 2002;80(2):321-323
Archive ouverte UNIGEMeijer FE, Morpurgo A, Klapwijk TM.
Physical review. B, Condensed matter. 2002;66(3):033107
Archive ouverte UNIGEUpward MD, Janssen JW, Gurevich L, Morpurgo A, Kouwenhoven LP.
Applied physics. A, Materials science & processing . 2001;72(S2):S253-S256
Archive ouverte UNIGEMorpurgo A, Baselmans JJA, van Wees BJ, Klapwijk TM.
Journal of low temperature physics. 2000;118(5-6):637-651
Archive ouverte UNIGEOlofsson LGM, Persson SHM, Morpurgo A, Marcus CM, Golubev D, Gunnarsson LK, Yao Y.
Journal of low temperature physics. 2000;118:343-353
Archive ouverte UNIGEMorpurgo A, Kong J, Marcus CM, Dai H.
Physica. B, Condensed matter . 2000;280(1-4):382-383
Archive ouverte UNIGEMorpurgo A, Marcus CM, Robinson DB.
Applied physics letters. 1999;74(14):2084-2086
Archive ouverte UNIGEMorpurgo A, Kong J, Marcus CM, Dai H.
Science. 1999;286(5438):263-265
Archive ouverte UNIGESoh HT, Quate CF, Morpurgo A, Marcus CM, Kong J, Dai H.
Applied physics letters. 1999;75(5):627-629
Archive ouverte UNIGEMorpurgo A, Heida JP, Klapwijk TM, van Wees BJ, Borghs G.
Physical review letters . 1999;83(8):1701
Archive ouverte UNIGEBaselmans JJA, Morpurgo A, van Wees BJ, Klapwijk TM.
Nature. 1999;397(6714):43-45
Archive ouverte UNIGEKong J, Zhou C, Morpurgo A, Soh HT, Quate CF, Marcus C, Dai H.
Applied physics. A, Materials science & processing . 1999;69(3):305-308
Archive ouverte UNIGEBaselmans JJA, Morpurgo A, van Wees BJ, Klapwijk TM.
Superlattices and microstructures. 1999;25(5-6):973-982
Archive ouverte UNIGEMorpurgo A, van Wees BJ, Klapwijk TM, Borghs G.
Physica. B, Condensed matter . 1998;249-251:458-461
Archive ouverte UNIGEMorpurgo A, Heida JP, Klapwijk TM, van Wees BJ, Borghs G.
Physical review letters . 1998;80(5):1050-1053
Archive ouverte UNIGEMorpurgo A, Heida JP, van Wees BJ, Klapwijk TM, Borghs G.
Solid-state electronics. 1998;42(7-8):1099-1102
Archive ouverte UNIGEMorpurgo A, Heida JP, van Wees BJ, Klapwijk TM, Borghs G.
Physica. B, Condensed matter. 1998;249-251:509-512
Archive ouverte UNIGEMorpurgo A, Klapwijk TM, van Wees BJ.
Applied physics letters. 1998;72(8):966-968
Archive ouverte UNIGEMorpurgo A, van Wees BJ, Klapwijk TM, Borghs G.
Physical review letters . 1997;79(20):4010-4013
Archive ouverte UNIGEMorpurgo A, Holl S, van Wees BJ, Klapwijk TM, Borghs G.
Physical review letters . 1997;78(13):2636-2639
Archive ouverte UNIGEMorpurgo A, van Wees BJ, Klapwijk TM, Borghs G.
Applied physics letters. 1997;70(11):1435-1437
Archive ouverte UNIGEvan Wees BJ, den Hartog SG, Morpurgo A.
Physical review letters . 1996;76(8):1402
Archive ouverte UNIGEMorpurgo A, Beltram F.
Physical review. B, Condensed matter. 1994;50(2):1325-1328
Archive ouverte UNIGEDoctoral Thesis
Grushina A.
This Thesis presents experimental results of quantum transport measurements on high quality (HQ) suspended graphene devices. A high-precision transfer technique for graphene flakes was developed and used to fabricate a suspended HQ graphene device with additional bottom gate structure. The behavior …
Archive ouverte UNIGESopic S.
The experimental results presented in this thesis show how the use of graphene provides new opportunities to investigate unexplored aspects of superconducting proximity effect (SPE). The interplay between decoherence and superconductivity is addressed by investigating the reentrance of SPE in…
Archive ouverte UNIGEMinder NA.
In this thesis we experimentally study the intrinsic charge transport properties in n-channel organic field-effect transistors and its disorder-induced suppression. We observe that certain molecular and crystal structures are beneficial for minimizing the disorder experienced by charge carriers and …
Archive ouverte UNIGEGuimaraes Couto NJ.
In this thesis we experimentally study charge transport through nano-devices made of graphene and topological insulators. In both these materials the low energy electronic states can be described by the Dirac equation. From systematic transport investigations of graphene devices on top of different …
Archive ouverte UNIGEGutierrez Lezama I.
Dans cette thèse nous présentons les résultats expérimentaux obtenus à partir d'une série d'études systématiques, mesures sur des transistors à effet de champ, du transport électronique effectuées sur des cristaux moléculaires organiques. La discussion porte sur des…
Archive ouverte UNIGE