Morpurgo Group - Quantum Electronics

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We are investigating quantum electronics

We use nano-electronic devices to investigate microscopic electronic processes in different classes of materials, with the aim to push further our fundamental understanding of their electronic properties, to discover new physical phenomena, and to contribute to the development of new practical electronic applications.

In our labs we have all the needed infrastructure, including e-beam lithography, e-beam evaporation, ac magnetron sputtering, and a clean-room.

Latest news

January 1, 2024

Farewell Chuanwu!

August 24, 2023

Farewell Fan!

August 23, 2023

Jiazhuo defends his master thesis!

RTS CQFD “Des matériaux aux propriétés quantiques”

Welcome Cheolyeon!

Welcome Dima!

Group life

Follow our laboratory life, events, PhD defensis, group outings and much more.

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Publications Hightlights

Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr₃ multilayers

Nature Communications volume 14, 4969 (2023)

In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear,…

Gate-Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS4

Advanced Materials volume 35, 2211653 (2023)

Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause…

Full Control of Solid‐State Electrolytes for Electrostatic Gating

Advanced Materials, 2211993 (2023)

Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose…

Quenching the bandgap of two-dimensional semiconductors with a perpendicular electric field

Nature Nanotechnology volume 17, 1078 (2022)

Perpendicular electric fields can tune the electronic band structure of atomically thin semiconductors. In bilayer graphene, which is an intrinsic zero-gap semiconductor, a perpendicular electric field opens…

Light sources with bias tunable spectrum based on van der Waals interface transistors

Nature Communications volume 13, 3917 (2022)

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the…

Quasi 1D Electronic Transport in a 2D Magnetic Semiconductor

Advanced Materials (2022)

We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy…